alpha
authorhackbard <hackbard@sage.physik.uni-augsburg.de>
Fri, 22 Feb 2008 07:34:35 +0000 (08:34 +0100)
committerhackbard <hackbard@sage.physik.uni-augsburg.de>
Fri, 22 Feb 2008 07:34:35 +0000 (08:34 +0100)
posic/talks/dpg_2008.tex

index 0a481f5..8214507 100644 (file)
  \end{minipage}
  \begin{minipage}[t]{6.3cm}
   \includegraphics[width=6.0cm]{../plot/sic_prec_energy_zoom.ps}
-  %\includegraphics[width=6.0cm]{../plot/sic_prec_temp.ps}
+  \includegraphics[width=6.0cm]{../plot/foo150.ps}
  \end{minipage}
 
 \end{slide}
   \hspace{4pt}
   \includegraphics[width=5.0cm]{sic_si-c-n.eps}
  \end{minipage}
+ \begin{minipage}[c]{12cm}
+  \includegraphics[width=6.0cm]{../plot/foo_end.ps}
+  \hspace{4pt}
+  \includegraphics[width=5.0cm]{foo_end.eps}
+ \end{minipage}
 
 \end{slide}
 
 \vspace{24pt}
 
 \begin{itemize}
- \item Importance of understanding C in Si
+ \item Importance of understanding the SiC precipitation mechanism
  \item Interstitial configurations in silicon using the Albe potential
  \item Indication of SiC precipitation
 \end{itemize}
  \item Displacement and stress calculations
  \item Diffusion dependence of temperature and carbon concentration
  \item Analyzing results of the precipitation simulation runs
+ \item Refinement of simulation sequence to create 3C-SiC
  \item Analyzing self-designed Si/SiC interface
 \end{itemize}