\pdfoutput=0
-%\documentclass[landscape,semhelv,draft]{seminar}
-\documentclass[landscape,semhelv]{seminar}
+\documentclass[landscape,semhelv,draft]{seminar}
+%\documentclass[landscape,semhelv]{seminar}
\usepackage{verbatim}
\usepackage[greek,german]{babel}
}
\end{minipage}
\end{picture}
+ \begin{picture}(0,0)(-230,-35)
+ \framebox{
+ {\footnotesize\color{blue}\bf Hex: micropipes along c-axis}
+ }
+ \end{picture}
+ \begin{picture}(0,0)(-230,-10)
+ \framebox{
+ \begin{minipage}{3cm}
+ {\footnotesize\color{blue}\bf 3C-SiC fabrication\\
+ less advanced}
+ \end{minipage}
+ }
+ \end{picture}
\end{slide}
\begin{minipage}{5cm}
Introduced C (defects)\\
$\rightarrow$ reduction of transition point\\
-$\rightarrow$ melting even at $T_{\text{m}}$
+$\rightarrow$ melting already at $T_{\text{m}}$
\end{minipage}
}
\item Spherical topotactically aligned precipitate\\
$r=3.0\text{ nm}$ $\Leftrightarrow$ $\approx$ 5500 C atoms
\item Create c-Si but skipped inside sphere of radius $x$
- \item Create 3C-SiC inside sphere of radius $x$ and lattice constant $y$
+ \item Create 3C-SiC inside sphere of radius $x$\\
+ and lattice constant $y$
\item Strong coupling to heat bath ($T=20\,^{\circ}\mathrm{C}$)
\end{itemize}
\end{minipage}
\item Slight increase of c-Si lattice constant!
\item C-C peaks (imply same distanced Si-Si peaks)
\begin{itemize}
- \item New peak at 0.307 nm: NN in 3C-SiC
+ \item New peak at 0.307 nm: 2$^{\text{nd}}$ NN in 3C-SiC
\item Bumps ({\color{green}$\downarrow$}):
4$^{\text{th}}$ and 6$^{\text{th}}$ NN
\end{itemize}
\item 3C-SiC lattice constant: 4.34 \AA (bulk: 4.36 \AA)\\
$\rightarrow$ compressed precipitate
\item Interface tension:\\
- 20.15 eV/nm$^2$ or $3.23 \times 10^{-4}$ J/cm$^2$
+ 20.15 eV/nm$^2$ or $3.23 \times 10^{-4}$ J/cm$^2$\\
+ (literature: $2 - 8 \times 10^{-4}$ J/cm$^2$)
\end{itemize}
\end{minipage}
\end{slide}
+\begin{slide}
+
+ {\large\bf
+ Investigation of a silicon carbide precipitate in silicon
+ }
+
+ \footnotesize
+
+\begin{minipage}{7cm}
+\underline{Appended annealing steps}
+\begin{itemize}
+ \item artificially constructed interface\\
+ $\rightarrow$ allow for rearrangement of interface atoms
+ \item check SiC stability
+\end{itemize}
+\underline{Temperature schedule}
+\begin{itemize}
+ \item rapidly heat up structure up to $2050\,^{\circ}\mathrm{C}$\\
+ (75 K/ps)
+ \item slow heating up to $1.2\cdot T_{\text{m}}=2940\text{ K}$
+ by 1 K/ps\\
+ $\rightarrow$ melting at around 2840 K
+ (\href{../video/sic_prec_120.avi}{$\rhd$})
+ \item cooling down structure at 100 \% $T_{\text{m}}$ (1 K/ps)\\
+ $\rightarrow$ no energetically more favorable struture
+\end{itemize}
+\end{minipage}
+\begin{minipage}{6cm}
+\includegraphics[width=6.7cm]{fe_and_t_sic.ps}
+\end{minipage}
+
+\begin{minipage}{4cm}
+\includegraphics[width=4cm]{sic_prec/melt_01.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{4cm}
+\includegraphics[width=4cm]{sic_prec/melt_02.eps}
+\end{minipage}
+\begin{minipage}{0.4cm}
+$\rightarrow$
+\end{minipage}
+\begin{minipage}{4cm}
+\includegraphics[width=4cm]{sic_prec/melt_03.eps}
+\end{minipage}
+
+\end{slide}
+
\begin{slide}
{\large\bf
Summary / Conclusion / Outlook
}
- \small
+ \scriptsize
-
+\vspace{0.1cm}
+
+\framebox{
+\begin{minipage}{12.9cm}
+ \underline{Defects}
+ \begin{itemize}
+ \item Summary \& conclusion
+ \begin{itemize}
+ \item Point defects excellently / fairly well described
+ by QM / classical potential simulations
+ \item Identified migration path explaining
+ diffusion and reorientation experiments
+ \item Agglomeration of point defects energetically favorable
+ \item C$_{\text{sub}}$ favored conditions (conceivable in IBS)
+ \end{itemize}
+ \item Todo
+ \begin{itemize}
+ \item Discussions concerning interpretation of QM results (Paderborn)
+ \item Compare migration barrier of
+ \hkl<1 1 0> Si and C-Si \hkl<1 0 0> dumbbell
+ \item Combination: Vacancy \& \hkl<1 1 0> Si self-interstitial \&
+ C-Si \hkl<1 0 0> dumbbell (IBS)
+ \end{itemize}
+ \end{itemize}
+\end{minipage}
+}
+
+\vspace{0.2cm}
+
+\framebox{
+\begin{minipage}[t]{6.2cm}
+ \underline{Pecipitation simulations}
+ \begin{itemize}
+ \item Summary \& conclusion
+ \begin{itemize}
+ \item Low T
+ $\rightarrow$ C-Si \hkl<1 0 0> dumbbell\\
+ dominated structure
+ \item High T $\rightarrow$ C$_{\text{sub}}$ dominated structure
+ \item High C concentration\\
+ $\rightarrow$ amorphous SiC like phase
+ \end{itemize}
+ \item Todo
+ \begin{itemize}
+ \item Accelerated method: self-guided MD
+ \item Activation relaxation technique
+ \item Constrainted transition path
+ \end{itemize}
+ \end{itemize}
+\end{minipage}
+}
+\framebox{
+\begin{minipage}[t]{6.2cm}
+ \underline{Constructed 3C-SiC precipitate}
+ \begin{itemize}
+ \item Summary \& conclusion
+ \begin{itemize}
+ \item Small / stable / compressed 3C-SiC\\
+ precipitate in slightly stretched\\
+ c-Si matrix
+ \item Interface tension matches experiemnts
+ \end{itemize}
+ \item Todo
+ \begin{itemize}
+ \item Try to improve interface
+ \item Precipitates of different size
+ \end{itemize}
+ \end{itemize}
+\end{minipage}
+}
+
+ \small
\end{slide}