short vers ...

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 5fe3369533a44552058dbacdd9bc990df0831481..b9c97424db1492b5449584a22fc77938ee4ab7ff 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -108,7 +108,7 @@
   title =        "Effect of Carbon on the Lattice Parameter of Silicon",
   publisher =    "AIP",
   year =         "1968",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "39",
   number =       "9",
   pages =        "4365--4368",
@@ -1088,7 +1088,7 @@
                  silicon",
   publisher =    "AIP",
   year =         "1993",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "74",
   number =       "6",
   pages =        "3815--3820",
@@ -1228,7 +1228,7 @@
                  silicon",
   publisher =    "AIP",
   year =         "1984",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "45",
   number =       "3",
   pages =        "268--269",
@@ -1248,7 +1248,7 @@
                  Ge[sup + ] and {C}[sup + ] implantation",
   publisher =    "AIP",
   year =         "1990",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "57",
   number =       "22",
   pages =        "2345--2347",
@@ -1267,7 +1267,7 @@
   title =        "Metastable SiGe{C} formation by solid phase epitaxy",
   publisher =    "AIP",
   year =         "1993",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "63",
   number =       "20",
   pages =        "2786--2788",
@@ -1288,7 +1288,7 @@
                  strained layer superlattices",
   publisher =    "AIP",
   year =         "1992",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "60",
   number =       "22",
   pages =        "2758--2760",
@@ -2150,7 +2150,7 @@
                  off-axis Si substrates",
   publisher =    "AIP",
   year =         "1987",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "51",
   number =       "11",
   pages =        "823--825",
@@ -2208,7 +2208,7 @@
                  vicinal (0001) 6{H}-Si{C} wafers",
   publisher =    "AIP",
   year =         "1990",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "56",
   number =       "15",
   pages =        "1442--1444",
@@ -2229,7 +2229,7 @@
                  substrates",
   publisher =    "AIP",
   year =         "1988",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "64",
   number =       "5",
   pages =        "2672--2679",
@@ -2273,7 +2273,7 @@
                  substrates",
   publisher =    "AIP",
   year =         "1988",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "63",
   number =       "8",
   pages =        "2645--2650",
@@ -2295,7 +2295,7 @@
                  on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
   publisher =    "AIP",
   year =         "1991",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "59",
   number =       "3",
   pages =        "333--335",
@@ -2388,7 +2388,7 @@
                  level using surface superstructures",
   publisher =    "AIP",
   year =         "1996",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "68",
   number =       "9",
   pages =        "1204--1206",
@@ -2540,7 +2540,7 @@
   title =        "High-temperature ion beam synthesis of cubic Si{C}",
   publisher =    "AIP",
   year =         "1990",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "67",
   number =       "6",
   pages =        "2908--2912",
@@ -2600,7 +2600,7 @@
                  implanted boron into silicon",
   publisher =    "AIP",
   year =         "1987",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "50",
   number =       "7",
   pages =        "416--418",
@@ -2621,7 +2621,7 @@
                  profiles",
   publisher =    "AIP",
   year =         "1990",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "68",
   number =       "12",
   pages =        "6191--6198",
@@ -2749,7 +2749,7 @@
                  Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
   publisher =    "AIP",
   year =         "1992",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "60",
   number =       "24",
   pages =        "3033--3035",
@@ -2838,7 +2838,7 @@
                  on Si(001) by adding small amounts of carbon",
   publisher =    "AIP",
   year =         "1994",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "64",
   number =       "25",
   pages =        "3440--3442",
@@ -2859,7 +2859,7 @@
                  molecular beam epitaxy",
   publisher =    "AIP",
   year =         "1992",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "60",
   number =       "3",
   pages =        "356--358",
@@ -3082,7 +3082,7 @@
                  by Low-Temperature Chemical Vapor Deposition",
   author =       "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
                  Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
-  journal =      "Japanese Journal of Applied Physics",
+  journal =      "Japanese J. Appl. Phys.",
   volume =       "41",
   number =       "Part 1, No. 4B",
   pages =        "2472--2475",
@@ -3118,7 +3118,7 @@
                  y] layers on Si(001)",
   publisher =    "AIP",
   year =         "1994",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "65",
   number =       "26",
   pages =        "3356--3358",
@@ -3140,7 +3140,7 @@
                  y]{C}[sub y] on Si(001)",
   publisher =    "AIP",
   year =         "1996",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "80",
   number =       "12",
   pages =        "6711--6715",
@@ -4415,7 +4415,7 @@
   title =        "Growth and Properties of beta-Si{C} Single Crystals",
   publisher =    "AIP",
   year =         "1966",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "37",
   number =       "1",
   pages =        "333--336",
@@ -4488,7 +4488,7 @@
                  improved external quantum efficiency",
   publisher =    "AIP",
   year =         "1982",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "53",
   number =       "10",
   pages =        "6962--6967",
@@ -4582,7 +4582,7 @@
                  single crystals by physical vapor transport",
   publisher =    "AIP",
   year =         "1998",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "72",
   number =       "13",
   pages =        "1632--1634",
@@ -4600,7 +4600,7 @@
   title =        "Antiphase boundaries in epitaxially grown beta-Si{C}",
   publisher =    "AIP",
   year =         "1987",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "50",
   number =       "4",
   pages =        "221--223",
@@ -4637,7 +4637,7 @@
   title =        "Step-flow epitaxial growth on two-domain surfaces",
   publisher =    "AIP",
   year =         "1996",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "79",
   number =       "3",
   pages =        "1423--1434",
@@ -4655,7 +4655,7 @@
                  carbonization of silicon",
   publisher =    "AIP",
   year =         "1995",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "78",
   number =       "3",
   pages =        "2070--2073",
@@ -4693,7 +4693,7 @@
                  molecular beam epitaxy",
   publisher =    "AIP",
   year =         "1992",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "60",
   number =       "7",
   pages =        "824--826",
@@ -4766,7 +4766,7 @@
                  molecular beam epitaxy",
   publisher =    "AIP",
   year =         "1994",
-  journal =      "Applied Physics Letters",
+  journal =      "Appl. Phys. Lett.",
   volume =       "65",
   number =       "22",
   pages =        "2851--2853",
@@ -4871,7 +4871,7 @@
   title =        "Effect of {H} on Si molecular-beam epitaxy",
   publisher =    "AIP",
   year =         "1993",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "74",
   number =       "11",
   pages =        "6615--6618",
@@ -4929,7 +4929,7 @@
   title =        "Defects in Carbon-Implanted Silicon",
   author =       "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
                  Fukuoka and Haruo Saito",
-  journal =      "Japanese Journal of Applied Physics",
+  journal =      "Japanese J. Appl. Phys.",
   volume =       "21",
   number =       "Part 1, No. 2",
   pages =        "399--400",
@@ -4967,7 +4967,7 @@
                  high-dose carbon ion implantation in silicon",
   publisher =    "AIP",
   year =         "1995",
-  journal =      "Journal of Applied Physics",
+  journal =      "J. Appl. Phys.",
   volume =       "77",
   number =       "7",
   pages =        "2978--2984",