posic/talks/seminar_2010.tex

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  31 \usepackage{semcolor}
  32 \usepackage{semlayer}           % Seminar overlays
  33 \usepackage{slidesec}           % Seminar sections and list of slides
  34
  35 \input{seminar.bug}             % Official bugs corrections
  36 \input{seminar.bg2}             % Unofficial bugs corrections
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  42 % font
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  47 \usepackage{upgreek}
  48
  49 \begin{document}
  50
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  78
  79 % topic
  80
  81 \begin{slide}
  82 \begin{center}
  83
  84  \vspace{16pt}
  85
  86  {\LARGE\bf
  87   Atomistic simulation study of the silicon carbide precipitation
  88   in silicon
  89  }
  90
  91  \vspace{48pt}
  92
  93  \textsc{F. Zirkelbach}
  94
  95  \vspace{48pt}
  96
  97  Lehrstuhlseminar
  98
  99  \vspace{08pt}
 100
 101  17. Juni 2010
 102
 103 \end{center}
 104 \end{slide}
 105
 106 % motivation / properties / applications of silicon carbide
 107 \begin{slide}
 108
 109 \small
 110
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 112
 113
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 119
 120  \rput[lt](0.2,4.6){\color{gray}PROPERTIES}
 121
 122  \rput[lt](0.5,4){wide band gap}
 123  \rput[lt](0.5,3.5){high electric breakdown field}
 124  \rput[lt](0.5,3){good electron mobility}
 125  \rput[lt](0.5,2.5){high electron saturation drift velocity}
 126  \rput[lt](0.5,2){high thermal conductivity}
 127
 128  \rput[lt](0.5,1.5){hard and mechanically stable}
 129  \rput[lt](0.5,1){chemically inert}
 130
 131  \rput[lt](0.5,0.5){radiation hardness}
 132
 133  \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}
 134
 135  \rput[rt](13,3.85){high-temperature, high power}
 136  \rput[rt](13,3.5){and high-frequency}
 137  \rput[rt](13,3.15){electronic and optoelectronic devices}
 138
 139  \rput[rt](13,2.35){material suitable for extreme conditions}
 140  \rput[rt](13,2){microelectromechanical systems}
 141  \rput[rt](13,1.65){abrasives, cutting tools, heating elements}
 142
 143  \rput[rt](13,0.85){first wall reactor material, detectors}
 144  \rput[rt](13,0.5){and electronic devices for space}
 145
 146 \end{pspicture}
 147
 148 \begin{picture}(0,0)(-10,68)
 149 \includegraphics[width=2.6cm]{wide_band_gap.eps}
 150 \end{picture}
 151 \begin{picture}(0,0)(-295,-165)
 152 \includegraphics[width=3cm]{sic_led.eps}
 153 \end{picture}
 154 \begin{picture}(0,0)(-215,-165)
 155 \includegraphics[width=2.5cm]{6h-sic_3c-sic.eps}
 156 \end{picture}
 157 \begin{picture}(0,0)(-313,65)
 158 \includegraphics[width=2.2cm]{infineon_schottky.eps}
 159 \end{picture}
 160 \begin{picture}(0,0)(-220,65)
 161 \includegraphics[width=2.9cm]{sic_wechselrichter_ise.eps}
 162 \end{picture}
 163
 164 \end{slide}
 165
 166 % contents
 167
 168 \begin{slide}
 169
 170 {\large\bf
 171  Outline
 172 }
 173
 174  \begin{itemize}
 175   \item Fabrication of silicon carbide
 176   \item Precipitation model
 177   \item Utilized simulation techniques
 178         \begin{itemize}
 179          \item Molecular dynamics (MD) simulations
 180          \item Density functional theory (DFT) calculations
 181         \end{itemize}
 182   \item Point defects in silicon
 183   \item Precipitation simulations
 184   \item Summary / Conclusion / Outlook
 185  \end{itemize}
 186
 187 \end{slide}
 188
 189 % start of contents
 190
 191 \begin{slide}
 192
 193  {\large\bf
 194   Motivation
 195  }
 196
 197  \vspace{4pt}
 198
 199  SiC - \emph{Born from the stars, perfected on earth.}
 200
 201  \vspace{4pt}
 202
 203  Herstellung d"unner SiC-Filme:
 204  \begin{itemize}
 205   \item modifizierter Lely-Prozess
 206         \begin{itemize}
 207          \item Impfkristall mit $T=2200 \, ^{\circ} \text{C}$
 208          \item umgeben von polykristallinen SiC mit
 209                $T=2400 \, ^{\circ} \text{C}$
 210         \end{itemize}
 211   \item CVD Homoepitaxie
 212         \begin{itemize}
 213          \item 'step controlled epitaxy' auf 6H-SiC-Substrat
 214          \item C$_3$H$_8$/SiH$_4$/H$_2$ bei $1500 \, ^{\circ} \text{C}$
 215          \item Winkel $\rightarrow$ 3C/6H/4H-SiC
 216          \item hohe Qualit"at aber limitiert durch\\
 217                Substratgr"o"se
 218         \end{itemize}
 219   \item CVD/MBE Heteroepitaxie von 3C-SiC auf Si
 220         \begin{itemize}
 221          \item 2 Schritte: Karbonisierung und Wachstum
 222          \item $T=650-1050 \, ^{\circ} \text{C}$
 223          \item Qualit"at/Gr"o"se noch nicht ausreichend
 224         \end{itemize}
 225  \end{itemize}
 226
 227  \begin{picture}(0,0)(-245,-50)
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 229  \end{picture}
 230  \begin{picture}(0,0)(-240,-35)
 231   \begin{minipage}{5cm}
 232   {\scriptsize
 233    NASA: 6H-SiC LED und 3C-SiC LED\\[-6pt]
 234    nebeneinander auf 6H-SiC-Substrat
 235   }
 236   \end{minipage}
 237  \end{picture}
 238
 239 \end{slide}
 240
 241 \end{document}