notes = "blue light emitting diodes (led)",
}
+@Article{powell87_2,
+ author = "J. A. Powell and L. G. Matus and M. A. Kuczmarski and
+ C. M. Chorey and T. T. Cheng and P. Pirouz",
+ collaboration = "",
+ title = "Improved beta-Si{C} heteroepitaxial films using
+ off-axis Si substrates",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "51",
+ number = "11",
+ pages = "823--825",
+ keywords = "VAPOR PHASE EPITAXY; SILICON CARBIDES; VAPOR DEPOSITED
+ COATINGS; SILICON; EPITAXIAL LAYERS; INTERFACE
+ STRUCTURE; SURFACE STRUCTURE; FILM GROWTH; STACKING
+ FAULTS; CRYSTAL DEFECTS; ANTIPHASE BOUNDARIES;
+ OXIDATION; CHEMICAL VAPOR DEPOSITION; ROUGHNESS",
+ URL = "http://link.aip.org/link/?APL/51/823/1",
+ doi = "10.1063/1.98824",
+ notes = "improved sic on off-axis si substrates, reduced apbs",
+}
+
@Article{kimoto93,
author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
and Hiroyuki Matsunami",
notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
}
+@Article{powell90_2,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of high quality 6{H}-Si{C} epitaxial films on
+ vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "15",
+ pages = "1442--1444",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+ TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+ DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1442/1",
+ doi = "10.1063/1.102492",
+ notes = "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+ author = "H. S. Kong and J. T. Glass and R. F. Davis",
+ collaboration = "",
+ title = "Chemical vapor deposition and characterization of
+ 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "64",
+ number = "5",
+ pages = "2672--2679",
+ keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+ COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+ MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+ STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+ PHASE EPITAXY; CRYSTAL ORIENTATION",
+ URL = "http://link.aip.org/link/?JAP/64/2672/1",
+ doi = "10.1063/1.341608",
+}
+
@Article{powell90,
author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
J. Choyke and J. L. Bradshaw and L. Henderson and M.
notes = "cvd of 3c-sic on 6h-sic",
}
+@Article{kong88,
+ author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+ Rozgonyi and K. L. More",
+ collaboration = "",
+ title = "An examination of double positioning boundaries and
+ interface misfit in beta-Si{C} films on alpha-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "63",
+ number = "8",
+ pages = "2645--2650",
+ keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+ FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+ FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+ MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+ STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+ URL = "http://link.aip.org/link/?JAP/63/2645/1",
+ doi = "10.1063/1.341004",
+}
+
+@Article{powell91,
+ author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+ Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+ and W. J. Choyke and L. Clemen and M. Yoganathan",
+ collaboration = "",
+ title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Applied Physics Letters",
+ volume = "59",
+ number = "3",
+ pages = "333--335",
+ keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+ PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+ MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+ URL = "http://link.aip.org/link/?APL/59/333/1",
+ doi = "10.1063/1.105587",
+}
+
@Article{yuan95,
author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
Thokala and M. J. Loboda",
metastable",
}
+@Article{chaussende07,
+ author = "D. Chaussende and P. J. Wellmann and M. Pons",
+ title = "Status of Si{C} bulk growth processes",
+ journal = "Journal of Physics D: Applied Physics",
+ volume = "40",
+ number = "20",
+ pages = "6150",
+ URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
+ year = "2007",
+ notes = "review of sic single crystal growth methods, process
+ modelling",
+}
+
@Article{feynman39,
title = "Forces in Molecules",
author = "R. P. Feynman",
model, interface",
}
+@Article{kitabatake97,
+ author = "Makoto Kitabatake",
+ title = "Simulations and Experiments of 3{C}-Si{C}/Si
+ Heteroepitaxial Growth",
+ publisher = "WILEY-VCH Verlag",
+ year = "1997",
+ journal = "physica status solidi (b)",
+ volume = "202",
+ pages = "405--420",
+ URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
+ doi = "10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
+ notes = "3c-sic heteroepitaxial growth on si off-axis model",
+}
+
@Article{chirita97,
title = "Strain relaxation and thermal stability of the
3{C}-Si{C}(001)/Si(001) interface: {A} molecular
notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
substrate",
}
+
+@Article{schulze98,
+ author = "N. Schulze and D. L. Barrett and G. Pensl",
+ collaboration = "",
+ title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
+ single crystals by physical vapor transport",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Applied Physics Letters",
+ volume = "72",
+ number = "13",
+ pages = "1632--1634",
+ keywords = "silicon compounds; semiconductor materials;
+ semiconductor growth; crystal growth from vapour;
+ photoluminescence; Hall mobility",
+ URL = "http://link.aip.org/link/?APL/72/1632/1",
+ doi = "10.1063/1.121136",
+ notes = "micropipe free 6h-sic pvt growth",
+}
+
+@Article{pirouz87,
+ author = "P. Pirouz and C. M. Chorey and J. A. Powell",
+ collaboration = "",
+ title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "50",
+ number = "4",
+ pages = "221--223",
+ keywords = "SILICON CARBIDES; DOMAIN STRUCTURE; SCANNING ELECTRON
+ MICROSCOPY; NUCLEATION; EPITAXIAL LAYERS; CHEMICAL
+ VAPOR DEPOSITION; ETCHING; ETCH PITS; TRANSMISSION
+ ELECTRON MICROSCOPY; ELECTRON MICROSCOPY; ANTIPHASE
+ BOUNDARIES",
+ URL = "http://link.aip.org/link/?APL/50/221/1",
+ doi = "10.1063/1.97667",
+ notes = "apb 3c-sic heteroepitaxy on si",
+}
+
+@Article{shibahara86,
+ title = "Surface morphology of cubic Si{C}(100) grown on
+ Si(100) by chemical vapor deposition",
+ journal = "Journal of Crystal Growth",
+ volume = "78",
+ number = "3",
+ pages = "538--544",
+ year = "1986",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(86)90158-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46D26F7-1R/2/cfdbc7607352f3bc99d321303e3934e9",
+ author = "Kentaro Shibahara and Shigehiro Nishino and Hiroyuki
+ Matsunami",
+ notes = "defects in 3c-sis cvd on si, anti phase boundaries",
+}
+
+@Article{desjardins96,
+ author = "P. Desjardins and J. E. Greene",
+ collaboration = "",
+ title = "Step-flow epitaxial growth on two-domain surfaces",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Journal of Applied Physics",
+ volume = "79",
+ number = "3",
+ pages = "1423--1434",
+ keywords = "ADATOMS; COMPUTERIZED SIMULATION; DIFFUSION; EPITAXY;
+ FILM GROWTH; SURFACE STRUCTURE",
+ URL = "http://link.aip.org/link/?JAP/79/1423/1",
+ doi = "10.1063/1.360980",
+ notes = "apb model",
+}
+
+@Article{henke95,
+ author = "S. Henke and B. Stritzker and B. Rauschenbach",
+ collaboration = "",
+ title = "Synthesis of epitaxial beta-Si{C} by {C}[sub 60]
+ carbonization of silicon",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "78",
+ number = "3",
+ pages = "2070--2073",
+ keywords = "SILICON CARBIDES; THIN FILMS; EPITAXY; CARBONIZATION;
+ FULLERENES; ANNEALING; XRD; RBS; TWINNING; CRYSTAL
+ STRUCTURE",
+ URL = "http://link.aip.org/link/?JAP/78/2070/1",
+ doi = "10.1063/1.360184",
+ notes = "ssmbe of sic on si, lower temperatures",
+}
+
+@Article{fuyuki97,
+ author = "T. Fuyuki and T. Hatayama and H. Matsunami",
+ title = "Heterointerface Control and Epitaxial Growth of
+ 3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
+ publisher = "WILEY-VCH Verlag",
+ year = "1997",
+ journal = "physica status solidi (b)",
+ volume = "202",
+ pages = "359--378",
+ notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
+ temperatures 750",
+}
+
+@Article{takaoka98,
+ title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
+ journal = "Journal of Crystal Growth",
+ volume = "183",
+ number = "1-2",
+ pages = "175--182",
+ year = "1998",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/S0022-0248(97)00391-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3W8STD4-V/2/8de695de037d5e20b8326c4107547918",
+ author = "T. Takaoka and H. Saito and Y. Igari and I. Kusunoki",
+ keywords = "Reflection high-energy electron diffraction (RHEED)",
+ keywords = "Scanning electron microscopy (SEM)",
+ keywords = "Silicon carbide",
+ keywords = "Silicon",
+ keywords = "Island growth",
+ notes = "lower temperature, 550-700",
+}
+
+@Article{hatayama95,
+ title = "Low-temperature heteroepitaxial growth of cubic Si{C}
+ on Si using hydrocarbon radicals by gas source
+ molecular beam epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "150",
+ number = "Part 2",
+ pages = "934--938",
+ year = "1995",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)80077-P",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-47RY2F6-1P/2/49acd5c4545dd9fd3486f70a6c25586e",
+ author = "Tomoaki Hatayama and Yoichiro Tarui and Takashi Fuyuki
+ and Hiroyuki Matsunami",
+}
projects / lectures / latex.git / blobdiff