notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
}
+@Article{powell90_2,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of high quality 6{H}-Si{C} epitaxial films on
+ vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "15",
+ pages = "1442--1444",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+ TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+ DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1442/1",
+ doi = "10.1063/1.102492",
+ notes = "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+ author = "H. S. Kong and J. T. Glass and R. F. Davis",
+ collaboration = "",
+ title = "Chemical vapor deposition and characterization of
+ 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "64",
+ number = "5",
+ pages = "2672--2679",
+ keywords = "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+ COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+ MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+ STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+ PHASE EPITAXY; CRYSTAL ORIENTATION",
+ URL = "http://link.aip.org/link/?JAP/64/2672/1",
+ doi = "10.1063/1.341608",
+}
+
@Article{powell90,
author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
J. Choyke and J. L. Bradshaw and L. Henderson and M.
notes = "cvd of 3c-sic on 6h-sic",
}
+@Article{kong88,
+ author = "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+ Rozgonyi and K. L. More",
+ collaboration = "",
+ title = "An examination of double positioning boundaries and
+ interface misfit in beta-Si{C} films on alpha-Si{C}
+ substrates",
+ publisher = "AIP",
+ year = "1988",
+ journal = "Journal of Applied Physics",
+ volume = "63",
+ number = "8",
+ pages = "2645--2650",
+ keywords = "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+ FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+ FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+ MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+ STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+ URL = "http://link.aip.org/link/?JAP/63/2645/1",
+ doi = "10.1063/1.341004",
+}
+
+@Article{powell91,
+ author = "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+ Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+ and W. J. Choyke and L. Clemen and M. Yoganathan",
+ collaboration = "",
+ title = "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+ on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Applied Physics Letters",
+ volume = "59",
+ number = "3",
+ pages = "333--335",
+ keywords = "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+ PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+ MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+ URL = "http://link.aip.org/link/?APL/59/333/1",
+ doi = "10.1063/1.105587",
+}
+
@Article{yuan95,
author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
Thokala and M. J. Loboda",
This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
-However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not not yet statisfactory.
+However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
+
+The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
+By CVD, both, the 3C \cite{kong88,powell90,powell91} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
+%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
+Investigations indicate that in so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+A model is suggested ...
+
+... diffusion of reactants in a stagnant layer.
-SiC on SiC epitaxy ...
\section{Ion beam synthesis of cubic silicon carbide}
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