hobler added
[lectures/latex.git] / bibdb / bibdb.bib
index 57e4e53..793ad39 100644 (file)
                  silicon",
 }
 
+@Article{hobler05,
+  title =        "Ab initio calculations of the interaction between
+                 native point defects in silicon",
+  journal =      "Materials Science and Engineering: B",
+  volume =       "124-125",
+  number =       "",
+  pages =        "368--371",
+  year =         "2005",
+  note =         "EMRS 2005, Symposium D - Materials Science and Device
+                 Issues for Future Technologies",
+  ISSN =         "0921-5107",
+  doi =          "DOI: 10.1016/j.mseb.2005.08.072",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+  author =       "G. Hobler and G. Kresse",
+  notes =        "vasp intrinsic si defect interaction study, capture
+                 radius",
+}
+
 @Article{ma10,
   title =        "Ab initio study of self-diffusion in silicon over a
                  wide temperature range: Point defect states and
   notes =        "ibs, burried sic layers",
 }
 
+@Article{lindner06,
+  title =        "On the balance between ion beam induced nanoparticle
+                 formation and displacive precipitate resolution in the
+                 {C}-Si system",
+  journal =      "Materials Science and Engineering: C",
+  volume =       "26",
+  number =       "5-7",
+  pages =        "857--861",
+  year =         "2006",
+  note =         "Current Trends in Nanoscience - from Materials to
+                 Applications",
+  ISSN =         "0928-4931",
+  doi =          "DOI: 10.1016/j.msec.2005.09.099",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+  author =       "J. K. N. Lindner and M. Häberlen and G. Thorwarth and
+                 B. Stritzker",
+  notes =        "c int diffusion barrier",
+}
+
 @Article{ito04,
   title =        "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
                  application in buffer layer for Ga{N} epitaxial