final a

diff --git a/posic/poster/emrs2008.tex b/posic/poster/emrs2008.tex
index aabf263..4a2ad21 100644 (file)
--- a/posic/poster/emrs2008.tex
+++ b/posic/poster/emrs2008.tex
@@ -22,6 +22,9 @@
 \background{.40 .48 .71}{.99 .99 .99}{0.5}
 
 \newrgbcolor{si-yellow}{.6 .6 0}
 \background{.40 .48 .71}{.99 .99 .99}{0.5}
 
 \newrgbcolor{si-yellow}{.6 .6 0}

+\newrgbcolor{hb}{0.75 0.77 0.89}
+\newrgbcolor{lbb}{0.75 0.8 0.88}
+\newrgbcolor{lachs}{1.0 .93 .81}

 
 % Groesse der einzelnen Spalten als Anteil der Gesamt-Textbreite
 \renewcommand{\columnfrac}{.31}
 
 % Groesse der einzelnen Spalten als Anteil der Gesamt-Textbreite
 \renewcommand{\columnfrac}{.31}


@@ -30,7 +33,7 @@
 \newcommand{\pot}{\mathcal{V}}
 
 % header
 \newcommand{\pot}{\mathcal{V}}
 
 % header

-\vspace{-18cm}
+\vspace{-18.5cm}

 \begin{header}
      \centerline{{\Huge \bfseries Molecular dynamics simulation
                                   of defect formation and precipitation}}
 \begin{header}
      \centerline{{\Huge \bfseries Molecular dynamics simulation
                                   of defect formation and precipitation}}


@@ -69,17 +72,19 @@
 
 \begin{poster}
 
 
 \begin{poster}
 

-%\vspace{-6cm}
+\vspace{-1cm}

 \begin{pcolumn}
   \begin{pbox}
     \section*{Motivation}
 \begin{pcolumn}
   \begin{pbox}
     \section*{Motivation}

-    {\bf Reasons for understanding the 3C-SiC precipitation process}
+    {\bf Importance of the 3C-SiC precipitation process in silicon}

     \begin{itemize}
     \begin{itemize}

-      \item Significant technological progress
-            in 3C-SiC wide band gap semiconductor thin film formation [1].
-      \item New perspectives for processes relying upon prevention of
-            precipitation, e.g. fabrication of strained pseudomorphic
-           $\text{Si}_{1-y}\text{C}_y$ heterostructures [2].
+      \item SiC is a promissing wide band gap material for high-temperature,
+            high-power. high-frequency semiconductor devices [1].
+      \item 3C-SiC epitaxial thin film formation on Si requires detailed
+            knowledge of SiC nucleation.
+      \item Fabrication of high carbon doped, strained pseudomorphic
+           $\text{Si}_{1-y}\text{C}_y$ layers requires suppression of
+           3C-SiC nucleation [2].

     \end{itemize}
     {\tiny
      [1] J. H. Edgar, J. Mater. Res. 7 (1992) 235.}\\
     \end{itemize}
     {\tiny
      [1] J. H. Edgar, J. Mater. Res. 7 (1992) 235.}\\


@@ -87,6 +92,7 @@
      [2] J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
          J. K. Watanabe, J. W. Mayer, J. Appl. Phys. 79 (1996) 637.}
   \end{pbox}
      [2] J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
          J. K. Watanabe, J. W. Mayer, J. Appl. Phys. 79 (1996) 637.}
   \end{pbox}

+  \vspace{-0.45cm}

   \begin{pbox}
     \section*{Crystalline silicon and cubic silicon carbide}
     {\bf Lattice types and unit cells:}
   \begin{pbox}
     \section*{Crystalline silicon and cubic silicon carbide}
     {\bf Lattice types and unit cells:}


@@ -112,19 +118,18 @@
       \includegraphics[width=10cm]{sic_unit_cell.eps}
     \end{minipage}
   \end{pbox}
       \includegraphics[width=10cm]{sic_unit_cell.eps}
     \end{minipage}
   \end{pbox}

+  \vspace{-0.45cm}

   \begin{pbox}
     \section*{Supposed Si to 3C-SiC conversion}
     {\bf Schematic of the conversion mechanism}\\\\
   \begin{pbox}
     \section*{Supposed Si to 3C-SiC conversion}
     {\bf Schematic of the conversion mechanism}\\\\

-    \begin{minipage}{7.8cm}
-    \includegraphics[width=7.7cm]{sic_prec_seq_01.eps}
+    \begin{minipage}[c]{8.8cm}
+    \includegraphics[width=8.0cm]{sic_prec_seq_01.eps}

     \end{minipage}
     \end{minipage}

-    \hspace{0.6cm}
-    \begin{minipage}{7.8cm}
-    \includegraphics[width=7.7cm]{sic_prec_seq_02.eps}
+    \begin{minipage}[c]{8.8cm}
+    \includegraphics[width=8.0cm]{sic_prec_seq_02.eps}

     \end{minipage}
     \end{minipage}

-    \hspace{0.6cm}
-    \begin{minipage}{7.8cm}
-    \includegraphics[width=7.7cm]{sic_prec_seq_03.eps}
+    \begin{minipage}[c]{8.1cm}
+    \includegraphics[width=8.0cm]{sic_prec_seq_03.eps}

     \end{minipage}
     \vspace{1cm}
     \begin{enumerate}
     \end{minipage}
     \vspace{1cm}
     \begin{enumerate}


@@ -135,13 +140,14 @@
     \vspace{1cm}
     {\bf Experimental observations} [3]
     \begin{itemize}
     \vspace{1cm}
     {\bf Experimental observations} [3]
     \begin{itemize}

-      \item Minimal diameter of precipitation: 2 - 4 nm
+      \item Minimal radius of precipitates: 2 - 4 nm

       \item Equal orientation of c-Si and 3C-SiC (hkl)-planes
     \end{itemize}
     {\tiny
      [3] J. K. N. Lindner, Appl. Phys. A 77 (2003) 27.
     }
   \end{pbox}
       \item Equal orientation of c-Si and 3C-SiC (hkl)-planes
     \end{itemize}
     {\tiny
      [3] J. K. N. Lindner, Appl. Phys. A 77 (2003) 27.
     }
   \end{pbox}

+  \vspace{-0.45cm}

   \begin{pbox}
     \section*{Simulation details}
     {\bf MD basics:}
   \begin{pbox}
     \section*{Simulation details}
     {\bf MD basics:}


@@ -190,7 +196,7 @@
 \begin{minipage}{15cm}
 {\small
  \begin{pspicture}(0,0)(14,14)
 \begin{minipage}{15cm}
 {\small
  \begin{pspicture}(0,0)(14,14)

-  \rput(7,12.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=green]{
+  \rput(7,12.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{

    \parbox{14cm}{
    \begin{itemize}
     \item Initial configuration: $9\times9\times9$ unit cells Si
    \parbox{14cm}{
    \begin{itemize}
     \item Initial configuration: $9\times9\times9$ unit cells Si


@@ -212,7 +218,7 @@
    \item random positions (critical distance check)
   \end{itemize}
   }}}}
    \item random positions (critical distance check)
   \end{itemize}
   }}}}

-  \rput(7,1.5){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=cyan]{
+  \rput(7,1.5){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=lbb]{

    \parbox{7cm}{
    Relaxation time: 2 ps
   }}}}
    \parbox{7cm}{
    Relaxation time: 2 ps
   }}}}


@@ -310,7 +316,7 @@
 {\small
  \begin{pspicture}(0,0)(30,13)
   % nodes
 {\small
  \begin{pspicture}(0,0)(30,13)
   % nodes

-  \rput(7.5,11){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=green]{
+  \rput(7.5,11){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{

    \parbox{15cm}{
    \begin{itemize}
     \item Initial configuration: $31\times31\times31$ unit cells Si
    \parbox{15cm}{
    \begin{itemize}
     \item Initial configuration: $31\times31\times31$ unit cells Si


@@ -319,7 +325,7 @@
     \item Equilibration of $E_{kin}$ and $E_{pot}$
    \end{itemize}
   }}}}
     \item Equilibration of $E_{kin}$ and $E_{pot}$
    \end{itemize}
   }}}}

-  \rput(7.5,5){\rnode{insert}{\psframebox[fillstyle=solid,fillcolor=red]{
+  \rput(7.5,5){\rnode{insert}{\psframebox[fillstyle=solid,fillcolor=lachs]{

    \parbox{15cm}{
    Insertion of 6000 carbon atoms at constant\\
    temperature into:
    \parbox{15cm}{
    Insertion of 6000 carbon atoms at constant\\
    temperature into:


@@ -329,7 +335,7 @@
     \item Volume of necessary amount of Si $V_3$
    \end{itemize} 
   }}}}
     \item Volume of necessary amount of Si $V_3$
    \end{itemize} 
   }}}}

-  \rput(7.5,1){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=cyan]{
+  \rput(7.5,1){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=lbb]{

    \parbox{8cm}{
    Cooling down to $20\, ^{\circ}\textrm{C}$
   }}}}
    \parbox{8cm}{
    Cooling down to $20\, ^{\circ}\textrm{C}$
   }}}}


@@ -372,14 +378,14 @@
             or diamond\\
            $\Rightarrow$ Formation of strong C-C bonds
                          (almost only for high C concentrations)
             or diamond\\
            $\Rightarrow$ Formation of strong C-C bonds
                          (almost only for high C concentrations)

+      \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC

       \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\
             (due to concatenated, differently oriented
             \flq100\frq{} dumbbell interstitials)
       \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\
             (due to concatenated, differently oriented
             \flq100\frq{} dumbbell interstitials)

-      \item Si-Si shows non-zero g(r) values around 0.31 nm
+      \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\

             and a decrease at regular distances\\
             (no clear peak,
             interval of enhanced g(r) corresponds to C-C peak width)
             and a decrease at regular distances\\
             (no clear peak,
             interval of enhanced g(r) corresponds to C-C peak width)

-      \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC

       \item Low C concentration (i.e. $V_1$):
             The \flq100\frq{} dumbbell configuration
             \begin{itemize}
       \item Low C concentration (i.e. $V_1$):
             The \flq100\frq{} dumbbell configuration
             \begin{itemize}


@@ -403,7 +409,7 @@
     }
 
   \end{pbox}
     }
 
   \end{pbox}

-  %\vspace{-0.5cm}
+  \vspace{-2cm}

   \begin{pbox}
     \section*{Conclusion}
     \begin{itemize}
   \begin{pbox}
     \section*{Conclusion}
     \begin{itemize}


@@ -417,6 +423,11 @@
            3C-SiC formation
     \end{itemize}
   \end{pbox}
            3C-SiC formation
     \end{itemize}
   \end{pbox}

+  \vspace{-2cm}
+  \begin{pbox}
+  One of us (F. Z.) wants to acknowledge financial support by the\\
+  {\bf Bayerische Forschungsstiftung} (DPA-61/05).
+  \end{pbox}

 
 \end{pcolumn}
 \end{poster}
 
 \end{pcolumn}
 \end{poster}