It is shown that C interstitials in Si tend to agglomerate, which is mainly driven by a reduction of strain.\r
Investigations of migration pathways, however, allow to conclude that C clustering fails to appear by thermally activated processes due to high activation energies of the the respective diffusion processes.\r
A highly attractive interaction and a large capture radius has been identified for the C$_{\text{i}}$ \hkl<1 0 0> DB and the vacancy indicating a high probability for the formation of C$_{\text{s}}$\r
-In contrast, a rapidly decreasing interaction with respect to the separation distance has been identified for C$_{\text{s}}$ and a Si$_{\text{i}}$ \hkl<1 1 0> DB resulting in a low probability of defects exhibiting respective separations ...\r
-These findings suggest an increased ... in prec model ....\r
+In contrast, a rapidly decreasing interaction with respect to the separation distance has been identified for C$_{\text{s}}$ and a Si$_{\text{i}}$ \hkl<1 1 0> DB resulting in a low probability of defects exhibiting respective separations to transform into the C$_{\text{i}}$ \hkl<1 0 0> DB, which constitutes the ground state configuration for a C atom introduced into otherwise perfect Si. \r
+Based on these findings conclusions on basic processes involved in the SiC precipitation in bulk Si are drawn.\r
+It is concluded that the precipitation process is governed by the formation of C$_{\text{s}}$ already in the initial stages.\r
+Agglomeration and rearrangement of C$_{\text{s}}$, however, is only possible by mobile C$_{\text{i}}$, which, thus, needs to be present at the same time.\r
+It is concluded that the precipitation proceeds by a successive occupation of Si lattice sites by C$_{\text{s}}$.\r
+However, rearrangement and agglomeration of these C atoms is only possible by forming acting as a vehicle for ...\r
+\r
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\section*{Acknowledgment}\r
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