Cleaning of the substrate surface with HCl is required prior to carbonization.
During carbonization the Si surface is chemically converted into a SiC film with a thickness of a few nm by exposing it to a flux of C atoms and concurrent heating up to temperatures about \unit[1400]{$^{\circ}$C}.
In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures.
Cleaning of the substrate surface with HCl is required prior to carbonization.
During carbonization the Si surface is chemically converted into a SiC film with a thickness of a few nm by exposing it to a flux of C atoms and concurrent heating up to temperatures about \unit[1400]{$^{\circ}$C}.
In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures.