-Figure \ref{fig:md:pc_sic-prec} shows the radial distribution of the obtained configuration.
-Comparing the Si-Si radial distribution of plain c-Si with the one of the precipitate configuration no difference is observed for the distances of neighboured silicon pairs.
-Although no sifnificant change of the lattice constant of the c-Si matrix was assumed, surprisingly there is no change at all within observational accuracy.
+Figure \ref{fig:md:pc_sic-prec} shows the radial distribution of the obtained precipitate configuration.
+The Si-Si radial distribution for both, plain c-Si and the precipitate configuration show a maximum at a distance of 0.235 nm, which is the distance of next neighboured Si atoms in c-Si.
+Although no significant change of the lattice constant of the surrounding c-Si matrix was assumed, surprisingly there is no change at all within observational accuracy.
+Each side length and the total volume of the simulation box is increased by 0.4 \% and 1.2 \% respectively of the initial state.
+Indeed an increase of the total volume is expected due to the slightly lower Si density of 3C-SiC compared to c-Si.
+The expected increase in volume can be calculated by
+\begin{equation}
+I_V=\frac{N^{\text{c-Si}}_{\text{Si}}/n_{\text{Si}}^{\text{c-Si}}+
+ N^{\text{3C-SiC}}_{\text{Si}}/n_{\text{Si}}^{\text{3C-SiC}}}
+ {N^{\text{c-Si and 3C-SiC}}_{\text{Si}}/n_{\text{Si}}^{\text{c-Si}}}
+\end{equation}
+with $N_{\text{Si}}$ and $n_{\text{Si}}$ being the number of Si atoms and the Si density respectively of the corresponding material.
+Due to a slightly lower Si density of 3C-SiC compared to c-Si an increase of x \% of the total volume would be expected for precipitate with a radius of 3 nm embedded in
+
+Calc expected increase due to Si density mismatch ...
+Obviously the surrounding matrix is chosen big enough to exclude size effects ...