Mattoni et al.\cite{mattoni2002} predict the ground state configuration for a \hkl[1 0 0] or equivalently a \hkl[0 1 0] defect created at position 1 with both defects basically maintaining the as-isolated DB structure, resulting in a binding energy of \unit[-2.1]{eV}.\r
In this work we observed a further relaxation of this defect structure.\r
The C atom of the second and the Si atom of the initial DB move towards each other forming a bond, which results in a somewhat lower binding energy of \unit[-2.25]{eV}.\r
-Apart from that, a more favorable configuration was found for the combination with a \hkl[0 -1 0] and \hkl[-1 0 0] DB respectively, which is assumed to constitute the actual ground state configuration of two C$_{\text{i}}$ DBs in Si.\r
+Apart from that, we found a more favorable configuration for the combination with a \hkl[0 -1 0] and \hkl[-1 0 0] DB respectively, which is assumed to constitute the actual ground state configuration of two C$_{\text{i}}$ DBs in Si.\r
The atomic arrangement is shown in the bottom right of Fig.~\ref{fig:036-239}.\r
The two C$_{\text{i}}$ atoms form a strong C-C bond, which is responsible for the large gain in energy resulting in a binding energy of \unit[-2.39]{eV}.\r
\r
-Investigating migration barriers enables to predict the probability of formation of defect complexes by thermally activated diffusion processes.\r
+Investigating migration barriers allows to predict the probability of formation of defect complexes by thermally activated diffusion processes.\r
% ground state configuration, C cluster\r
Based on the lowest energy migration path of a single C$_{\text{i}}$ DB the configuration, in which the second C$_{\text{i}}$ DB is oriented along \hkl[0 1 0] at position 2 is assumed to constitute an ideal starting point for a transition into the ground state.\r
In addition, the starting configuration exhibits a low binding energy (\unit[-1.90]{eV}) and is, thus, very likely to occur.\r
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