more intro

diff --git a/posic/publications/c_defects_in_si.tex b/posic/publications/c_defects_in_si.tex
index 6386eea..94438bc 100644 (file)
--- a/posic/publications/c_defects_in_si.tex
+++ b/posic/publications/c_defects_in_si.tex
@@ -43,13 +43,11 @@ Silicon carbide (SiC) has a number of remarkable physical and chemical propertie
 The wide band gap semiconductor (2.3 eV - 3.3 eV) exhibiting a high breakdown field, saturated electron drift velocity and thermal conductivity in conjunction with its unique thermal and mechanical stability as well as radiation hardness is a suitable material for high-temperature, high-frequency and high-power devices\cite{wesch96}, which are moreover deployable in harsh environments\cite{capano97}.\r
 % there are different polytpes with different properties and 3c-sic in special\r
 SiC, which forms fourfold coordinated covalent bonds, tends to crystallize into many different modifications, which solely differ in the one-dimensional stacking sequence of identical, close-packed SiC bilayers\cite{fischer90}.\r
-Different polytypes exhibit different properties, where the only cubic phase (3C-SiC) shows increased values for the thermal conductivity and breakdown field compared to other polytypes\cite{wesch96}, which is of special interest for highly efficient and high-power electronic device applications.\r
+Different polytypes exhibit different properties, in which the cubic phase (3C-SiC) shows increased values for the thermal conductivity and breakdown field compared to other polytypes\cite{wesch96}, which is thus most effective for high-performance electronic devices.\r
 \r
 % (thin films of) 3c-sic can be produced by ibs\r
-Next to epitaxial layer growth by chemical vapor deposition\cite{powell90} and molecular beam epitaxy\cite{mbe}, ion beam synthesis (IBS) constitutes a promising method to produce 3C-SiC epitaxial layers of high quality in silicon\cite{ibs}.\r
-\r
-\r
-        \r
+Next to 3C-SiC epitaxial layer growth by chemical vapor deposition (CVD) on 6H-SiC substrates\cite{powell90} or molecular beam epitaxy on silicon\cite{} as well as 6H-SiC\cite{}, ion beam synthesis (IBS) constitutes a promising method to produce 3C-SiC epitaxial layers of high quality in crystalline silicon\cite{lindner02} (c-Si).\r
+Highly energetic carbon ions are ...\r
 \r
 The relevant structures are with $\approx$ 20000 atoms/nanocrystal way too large to be completely be described with high accuracy \r
 quantum mechanical methods. Modelling the processes described above require the use of less accurate methods, like e.g. classical \r