author hackbard Thu, 15 Oct 2009 16:12:46 +0000 (18:12 +0200) committer hackbard Thu, 15 Oct 2009 16:12:46 +0000 (18:12 +0200)
 posic/thesis/Makefile patch | blob | history posic/thesis/basics.tex patch | blob | history posic/thesis/intro.tex patch | blob | history posic/thesis/literature.tex patch | blob | history

index eabf68b..2ec77fb 100644 (file)
@@ -4,6 +4,7 @@ DVIPS = dvips -tlandscape
DVIPDF= dvipdf
PS2PDF = ps2pdf
PDFLATEX = pdflatex
+BIBTEX = bibtex

SRC = thesis.tex
PDF = $(SRC:%.tex=%.pdf) @@ -11,8 +12,10 @@ PDF =$(SRC:%.tex=%.pdf)
all: $(PDF) %.dvi: %.tex -$(PDFLATEX) $<$@
-       $(PDFLATEX)$< $@ +$(LATEX) $< +$(BIBTEX) $(SRC:%.tex=%) +$(LATEX) $< +$(LATEX) $< %.ps: %.dvi$(DVIPS) $< index af46974..75dd18b 100644 (file) @@ -17,7 +17,7 @@ This understanding was one of the first ideas for doing molecular dynamics simul \subsection{Introduction to molecular dynamics simulations} Basically, molecular dynamics (MD) simulation is a technique to compute a system of particles, referred to as molecules, with their positions, volocities and forces among each other evolving in time. -The MD method was first introduced by Alder and Wainwright in 1957 \cite{alder1,alder2} to study the interactions of hard spheres. +The MD method was first introduced by Alder and Wainwright in 1957 \cite{alder57,alder59} to study the interactions of hard spheres. The basis of the approach are Newton's equations of motion to describe classicaly the many-body system. MD simulation is the numerical way of solving the$N$-body problem which cannot be solved analytically ($N>3$). Quantum mechanical effects are taken into account by an analytical interaction potential between the nuclei. @@ -137,7 +137,7 @@ In the following, relevant potentials for this work are discussed. Tersoff proposed an empirical interatomic potential for covalent systems. The Tersoff potential explicitly incorporates the dependence of bond order on local envirenments, permitting an improved description of covalent materials. -Tersoff applied the potential to silicon \cite{tersoff_silicon1,tersoff_silicon2,tersoff_silicon3}, carbon \cite{tersoff_carbon} and also to multicomponent systems like$SiC$\cite{tersoff_multi}. +Tersoff applied the potential to silicon \cite{tersoff_si1,tersoff_si2,tersoff_si3}, carbon \cite{tersoff_c} and also to multicomponent systems like$SiC\$ \cite{tersoff_m}.
The basic idea is that, in real systems, the bond order depends upon the local environment.
An atom with many neighbours forms weaker bonds than an atom with few neighbours.

index a81b272..d88e921 100644 (file)
@@ -1,2 +1,27 @@
\chapter{Introduction}

+Silicon carbide (SiC) has a number of remarkable physical and chemical properties that make it a promising new material in various fields of applications.
+The high electron mobility and saturation drift velocity as well as the high band gap and breakdown field in conjunction with its unique thermal stability and conductivity unveil SiC as the ideal candidate for high-power, high-frequency and high-temperature electronic and optoelectronic devices exceeding conventional silicon based solutions \cite{wesch96,morkoc94,foo}.
+\\
+
+
+New means: Ion beam synthesis (IBS) of burried SiC layers ...
+\\
+
+Model of precipitation ...
+\\
+
+Therefore the understanding of carbon, as an isovalent impurity in silicon is of fundamental interest...
+\\
+
+Control of dopant diffusion in silicon device manufacturing / transient enhanced diffusion (TED) ...
+\\
+
+
+Strained silicon to achieve higher charge carrier velocities ...
+\\
+
+
+In chapter ...
+
+
index 454bacb..704eee2 100644 (file)
@@ -1,37 +1,5 @@
-\begin{thebibliography}{99}
-  \bibitem{laplace}
-    P. S. de Laplace.
-    Th\'eorie analytique des probabilit\'es.
-    Oeuvres Compl\`etes de Laplace, volume VII.
-    Paris, 1820, Gauthier-Villars.
-  \bibitem{alder1}
-    B. J. Alder, T. E. Wainwright.
-    J. Chem. Phys. 27 (1957) 1208.
-  \bibitem{alder2}
-    B. J. Alder, T. E. Wainwright.
-    J. Chem. Phys. 31 (1959) 459.
-  \bibitem{stillinger_weber}
-    F. H. Stillinger, T. A. Weber.
-    Phys. Rev. B 31 (1985) 5262.
-  \bibitem{tersoff_silicon1}
-    J. Tersoff.
-    Phys. Rev. Lett. 56 (1986) 632.
-  \bibitem{tersoff_silicon2}
-    J. Tersoff.
-    Phys. Rev. B 37 (1988) 6991.
-  \bibitem{tersoff_silicon3}
-    J. Tersoff.
-    Phys. Rev. B 38 (1988) 9902.
-  \bibitem{tersoff_carbon}
-    J. Tersoff.
-    Phys. Rev. Lett. 61 (1988) 2879.
-  \bibitem{tersoff_multi}
-    J. Tersoff.
-    Phys. Rev. B 39 (1989) 5566.
-  \bibitem{example}
-    \selectlanguage{german}
-    F. Zirkelbach, M. H"aberlen, J. K. N. Lindner, B. Stritzker.
-    \selectlanguage{english}
-    Comp. Mater. Sci. 33 (2005) 310.
-\end{thebibliography}
+\renewcommand\bibname{References}
+\bibliography{../../bibdb/bibdb}{}
+\bibliographystyle{h-physrev3}
+