small changes to sic ibs

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index cb3ae4a..a766650 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -2058,6 +2058,58 @@
                  ideas",
 }
 
+@Article{edelman76,
+  author =       "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
+                 and E. V. Lubopytova",
+  title =        "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
+                 by ion implantation",
+  publisher =    "Taylor \& Francis",
+  year =         "1976",
+  journal =      "Radiation Effects",
+  volume =       "29",
+  number =       "1",
+  pages =        "13--15",
+  URL =          "http://www.informaworld.com/10.1080/00337577608233477",
+  notes =        "3c-sic for different temperatures, amorphous, poly,
+                 single crystalline",
+}
+
+@Article{akimchenko80,
+  author =       "I. P. Akimchenko and K. V. Kisseleva and V. V. Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
+  title =        "Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions",
+  publisher =    "Taylor \& Francis",
+  year =         "1980",
+  journal =      "Radiation Effects",
+  volume =       "48",
+  number =       "1",
+  pages =        "7",
+  URL =          "http://www.informaworld.com/10.1080/00337578008209220",
+  notes =        "3c-sic nucleation by thermal spikes",
+}
+
+@Article{martin90,
+  author =       "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
+                 and M. Olivier and A. M. Papon and G. Rolland",
+  collaboration = "",
+  title =        "High-temperature ion beam synthesis of cubic Si{C}",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Journal of Applied Physics",
+  volume =       "67",
+  number =       "6",
+  pages =        "2908--2912",
+  keywords =     "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
+                 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
+                 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
+                 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
+                 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
+                 REACTIONS; MONOCRYSTALS",
+  URL =          "http://link.aip.org/link/?JAP/67/2908/1",
+  doi =          "10.1063/1.346092",
+  notes =        "triple energy implantation to overcome high annealing
+                 temepratures",
+}
+
 @Article{reeson87,
   author =       "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
                  J. Davis and G. E. Celler",

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 8af85c0..77e41a2 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -220,10 +220,9 @@ Solving this issue remains a challenging problem necessary to drive SiC for pote
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.
-In the following ...
 
 High-dose carbon implantation into \ac{c-Si} with subsequent or in situ annealing was found to result in SiC microcrystallites in Si \cite{borders71}.
-\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit{10}[at.\%] C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
+\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
 
 Utilized and enhanced, 30 years devel ... (-32)
 By understanding some basci processes (32-36), \ac{IBS} nowadays has become a promising method to form thin SiC layers of high quality exclusively of the 3C polytype embedded in and epitactically aligned to the Si host featuring a sharp interface \cite{lindner99,lindner01,lindner02}.