started sic on sic

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 83dedd2957b08d776b9f9e36ec9125d18b020438..3f229685072aeb5c25d1d84116f83c3016663b56 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1751,6 +1751,49 @@
   notes =        "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
 }
 
+@Article{powell90_2,
+  author =       "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+                 J. Choyke and J. L. Bradshaw and L. Henderson and M.
+                 Yoganathan and J. Yang and P. Pirouz",
+  collaboration = "",
+  title =        "Growth of high quality 6{H}-Si{C} epitaxial films on
+                 vicinal (0001) 6{H}-Si{C} wafers",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Applied Physics Letters",
+  volume =       "56",
+  number =       "15",
+  pages =        "1442--1444",
+  keywords =     "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+                 PROPERTIES; WAFERS; CARRIER DENSITY; CARRIER MOBILITY;
+                 TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS;
+                 DISLOCATIONS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY",
+  URL =          "http://link.aip.org/link/?APL/56/1442/1",
+  doi =          "10.1063/1.102492",
+  notes =        "cvd of 6h-sic on 6h-sic",
+}
+
+@Article{kong88_2,
+  author =       "H. S. Kong and J. T. Glass and R. F. Davis",
+  collaboration = "",
+  title =        "Chemical vapor deposition and characterization of
+                 6{H}-Si{C} thin films on off-axis 6{H}-Si{C}
+                 substrates",
+  publisher =    "AIP",
+  year =         "1988",
+  journal =      "Journal of Applied Physics",
+  volume =       "64",
+  number =       "5",
+  pages =        "2672--2679",
+  keywords =     "THIN FILMS; CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITED
+                 COATINGS; SILICON CARBIDES; TRANSMISSION ELECTRON
+                 MICROSCOPY; MONOCRYSTALS; MORPHOLOGY; CRYSTAL
+                 STRUCTURE; CRYSTAL DEFECTS; CARRIER DENSITY; VAPOR
+                 PHASE EPITAXY; CRYSTAL ORIENTATION",
+  URL =          "http://link.aip.org/link/?JAP/64/2672/1",
+  doi =          "10.1063/1.341608",
+}
+
 @Article{powell90,
   author =       "J. A. Powell and D. J. Larkin and L. G. Matus and W.
                  J. Choyke and J. L. Bradshaw and L. Henderson and M.
@@ -1773,6 +1816,48 @@
   notes =        "cvd of 3c-sic on 6h-sic",
 }
 
+@Article{kong88,
+  author =       "H. S. Kong and B. L. Jiang and J. T. Glass and G. A.
+                 Rozgonyi and K. L. More",
+  collaboration = "",
+  title =        "An examination of double positioning boundaries and
+                 interface misfit in beta-Si{C} films on alpha-Si{C}
+                 substrates",
+  publisher =    "AIP",
+  year =         "1988",
+  journal =      "Journal of Applied Physics",
+  volume =       "63",
+  number =       "8",
+  pages =        "2645--2650",
+  keywords =     "SILICON CARBIDES; INTERFACES; SILICON; STACKING
+                 FAULTS; TRANSMISSION ELECTRON MICROSCOPY; EPITAXY; THIN
+                 FILMS; OPTICAL MICROSCOPY; TOPOGRAPHY; NUCLEATION;
+                 MORPHOLOGY; ROTATION; SURFACE STRUCTURE; INTERFACE
+                 STRUCTURE; XRAY TOPOGRAPHY; EPITAXIAL LAYERS",
+  URL =          "http://link.aip.org/link/?JAP/63/2645/1",
+  doi =          "10.1063/1.341004",
+}
+
+@Article{powell91,
+  author =       "J. A. Powell and J. B. Petit and J. H. Edgar and I. G.
+                 Jenkins and L. G. Matus and J. W. Yang and P. Pirouz
+                 and W. J. Choyke and L. Clemen and M. Yoganathan",
+  collaboration = "",
+  title =        "Controlled growth of 3{C}-Si{C} and 6{H}-Si{C} films
+                 on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
+  publisher =    "AIP",
+  year =         "1991",
+  journal =      "Applied Physics Letters",
+  volume =       "59",
+  number =       "3",
+  pages =        "333--335",
+  keywords =     "SILICON CARBIDES; SURFACE TREATMENTS; SORPTIVE
+                 PROPERTIES; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL
+                 MODELS; CRYSTAL STRUCTURE; VERY HIGH TEMPERATURE",
+  URL =          "http://link.aip.org/link/?APL/59/333/1",
+  doi =          "10.1063/1.105587",
+}
+
 @Article{yuan95,
   author =       "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
                  Thokala and M. J. Loboda",

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index ee9f2c8731af991a789d7ee8009ad0d9ae864393..abcdd3e0a48ed8cdd2b6fb5b9c7ffd864e66e93b 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -173,9 +173,17 @@ However, the number of such defects can be reduced by off-axis growth on a Si \h
 This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
 By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
 In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
-However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not not yet statisfactory.
+However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
+
+The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
+By CVD, both, the 3C \cite{kong88,powell90,powell91} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
+%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
+Investigations indicate that in so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+A model is suggested ...
+
+... diffusion of reactants in a stagnant layer.
 
-SiC on SiC epitaxy ...
 
 \section{Ion beam synthesis of cubic silicon carbide}