more on sic on sic epitaxy

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 3f229685072aeb5c25d1d84116f83c3016663b56..761a8d39c519e60989d980ff3711690bd3ef3a52 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1732,6 +1732,22 @@
   notes =        "improved sic on off-axis si substrates, reduced apbs",
 }
 
+@Article{ueda90,
+  title =        "Crystal growth of Si{C} by step-controlled epitaxy",
+  journal =      "Journal of Crystal Growth",
+  volume =       "104",
+  number =       "3",
+  pages =        "695--700",
+  year =         "1990",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(90)90013-B",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46CC6CX-KN/2/d5184c7bd29063985f7d1dd4112b12c9",
+  author =       "Tetsuzo Ueda and Hironori Nishino and Hiroyuki
+                 Matsunami",
+  notes =        "step-controlled epitaxy model",
+}
+
 @Article{kimoto93,
   author =       "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
                  and Hiroyuki Matsunami",

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index abcdd3e0a48ed8cdd2b6fb5b9c7ffd864e66e93b..b41d5758d8bcdb76873449db8745741e63eb96bf 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -176,14 +176,14 @@ In summary, the almost universal use of Si has allowed significant progress in t
 However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
 
 The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
-By CVD, both, the 3C \cite{kong88,powell90,powell91} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
-In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
+By CVD, both, the 3C \cite{kong88,powell90} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{ueda90,kimoto93}.
 %In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
-Investigations indicate that in so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
-A model is suggested ...
-
-... diffusion of reactants in a stagnant layer.
-
+Investigations indicate that in the so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+This growth mechanism does not require two-dimensional nucleation.
+Instead, crystal growth is governed by mass transport, i.e. the diffusion of reactants in a stagnant layer.
+In contrast, layers of the 3C polytype are formed on exactly oriented \hkl(0 0 0 1) 6H-SiC substrates by two-dimensional nucleation on terraces.
+Lateral 3C-SiC growth was also observed on on low tilt angle off-axis substrates ... by dislocations \cite{powell91} ... used to lower APB density due to controlled starting points of 3C-SiC growth ...
 
 \section{Ion beam synthesis of cubic silicon carbide}