-Investigations indicate that in so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
-A model is suggested ...
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-... diffusion of reactants in a stagnant layer.
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+Investigations indicate that in the so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+This growth mechanism does not require two-dimensional nucleation.
+Instead, crystal growth is governed by mass transport, i.e. the diffusion of reactants in a stagnant layer.
+In contrast, layers of the 3C polytype are formed on exactly oriented \hkl(0 0 0 1) 6H-SiC substrates by two-dimensional nucleation on terraces.
+Lateral 3C-SiC growth was also observed on on low tilt angle off-axis substrates ... by dislocations \cite{powell91} ... used to lower APB density due to controlled starting points of 3C-SiC growth ...