nearly able to start w ibs now ...

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 81c6a1d..5961c39 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -212,7 +212,9 @@ Although, in the first experiments, temperatures still above \unit[1100]{$^{\cir
 In the latter approach, as in GSMBE, excess Si atoms, which are controlled by the Si/C flux ratio, result in the formation of a Si adlayer and the formation of a non-stoichiometric, reconstructed surface superstructure, which influences the mobility of adatoms and, thus, has a decisive influence on the growth mode, polytype and crystallinity \cite{fissel95,fissel96,righi03}.
 Therefore, carefully controlling the Si/C ratio could be exploited to obtain definite heterostructures of different SiC polytypes providing the possibility for band gap engineering in SiC materials.
 
-To summarize ... remaining obstacles are ... APB in 3C ... and micropipes in hexagonal SiC?
+To summarize, much progress has been made in SiC thin film growth during the last few years.
+However, the frequent occurence of defects such as dislocations, twins and double positioning boundaries limit the structural and electrical characteristics of large SiC films.
+Solving these issues remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}.
 
 \subsection{Ion beam synthesis of cubic silicon carbide}