+\begin{minipage}{6.5cm}
+\includegraphics[width=6.4cm]{sic_prec_450_si-c.ps}
+\end{minipage}
+\begin{minipage}{6.5cm}
+\scriptsize
+\underline{Low C concentration ($V_1$)}\\
+\hkl<1 0 0> C-Si dumbbell dominated structure
+\begin{itemize}
+ \item Si-C bumbs around 0.19 nm
+ \item C-C peak at 0.31 nm (as expected in 3C-SiC):\\
+ concatenated dumbbells of various orientation
+ \item Si-Si NN distance stretched to 0.3 nm
+\end{itemize}
+{\color{blue}$\Rightarrow$ C atoms in proper 3C-SiC distance first}\\
+\underline{High C concentration ($V_2$, $V_3$)}\\
+High amount of strongly bound C-C bonds\\
+Defect density $\uparrow$ $\Rightarrow$ considerable amount of damage\\
+Only short range order observable\\
+{\color{blue}$\Rightarrow$ amorphous SiC-like phase}
+\end{minipage}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Limitations of molecular dynamics and short range potentials
+ }
+
+\footnotesize
+
+\vspace{0.2cm}
+
+\underline{Time scale problem of MD}\\[0.2cm]
+Minimize integration error\\
+$\Rightarrow$ discretization considerably smaller than
+ reciprocal of fastest vibrational mode\\[0.1cm]
+Order of fastest vibrational mode: $10^{13} - 10^{14}\text{ Hz}$\\
+$\Rightarrow$ suitable choice of time step:
+ $\tau=1\text{ fs}=10^{-15}\text{ s}$\\
+$\Rightarrow$ {\color{red}\underline{slow}} phase space propagation\\[0.1cm]
+Several local minima in energy surface separated by large energy barriers\\
+$\Rightarrow$ transition event corresponds to a multiple
+ of vibrational periods\\
+$\Rightarrow$ phase transition made up of {\color{red}\underline{many}}
+ infrequent transition events\\[0.1cm]
+{\color{blue}Accelerated methods:}
+\underline{Temperature accelerated} MD (TAD), self-guided MD \ldots
+
+\vspace{0.3cm}
+
+\underline{Limitations related to the short range potential}\\[0.2cm]
+Cut-off function pushing forces and energies to zero between 1$^{\text{st}}$
+and 2$^{\text{nd}}$ next neighbours\\
+$\Rightarrow$ overestimated unphysical high forces of next neighbours
+
+\vspace{0.3cm}
+
+\framebox{
+\color{red}
+Potential enhanced problem of slow phase space propagation
+}
+
+\vspace{0.3cm}
+
+\underline{Approach to the (twofold) problem}\\[0.2cm]
+Increased temperature simulations without TAD corrections\\
+(accelerated methods or higher time scales exclusively not sufficient)
+
+\begin{picture}(0,0)(-262,-10)
+\frame{
+\begin{minipage}{4.3cm}
+\tiny
+\begin{center}
+\vspace{0.03cm}
+\underline{IBS}
+\end{center}
+\begin{itemize}
+\item 3C-SiC also observed for higher T
+\item higher T inside sample
+\item structural evolution vs.\\
+ equilibrium properties
+\end{itemize}
+\end{minipage}
+}
+\end{picture}
+
+\begin{picture}(0,0)(-305,-152)
+\frame{
+\begin{minipage}{2.6cm}
+\tiny
+\begin{center}
+retain proper\\
+thermodynmic sampling
+\end{center}
+\end{minipage}
+}
+\end{picture}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Increased temperature simulations
+ }
+
+\small
+
+Low concentration simulation
+
+
+
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Increased temperature simulations
+ }
+
+\small
+
+High concentration simulation
+
+
+
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Silicon carbide precipitation simulations
+ }
+
+ \small
+